Fourier method modeling of semiconductor devices

نویسنده

  • Valery Axelrad
چکیده

A novel high-order approach to numerical modeling of semiconductor devices is presented. The new method is a combination of the classical Fourier-series Galerkin procedure, a special matrix calculus, and fast numerical pseudospectral techniques. The proposed algorithm renders the exact solution (machine precision) of the semiconductor equations in closed form of a trigonometric polynomial. The condition number of the diagonally dominant discrete equations is near unity. As a consequence, a highly accurate solution is achieved at moderate computer costs. The method has been implemented for oneand two-dimensional device models. Properties of the new procedure are demonstrated on examples.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS

During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential Algebraic Equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design ...

متن کامل

Modeling and Simulations of Beam Stabilization in Edge-Emitting Broad Area Semiconductor Devices

A 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for c...

متن کامل

A new grid-generation method for 2-D simulation of devices with nonplanar semiconductor surface

A general analytical method is proposed to transform a 2-D multilayer physical domain with the nonplanar semiconductor surface into a 2-D rectangular mathematical domain with the planar surface, in which a set of Fourier series are used to describe a general conformal mapping for each layer. Based on the proposed method, a simple iteration algorithm, which incorporates a nonlinear Jacobian-iter...

متن کامل

A Proposal for a New Method of Modeling of the Quantum Dot Semiconductor Optical Amplifiers

With the advancement of nanoscale semiconductor technology,semiconductor optical amplifiers are used to amplify and process all-optical signals. Inthis paper, with the aim of calculating the gain of quantum dot semiconductor opticalamplifier (QD-SOA), two groups of rate equations and the optical signal propagatingequation are used in the active layer of the device. For t...

متن کامل

A Spectral Method for the Numerical Simulation of Transit-Time Devices

For the numerical simulation of semiconductor devices driven by a periodic voltage a new numerical approach is presented. The method is based on a temporal Fourier expansion to solve time-dependent nonlinear partial differential equations like the Drift-Diffusion Model. Disadvantages and problems of conventionally used time discretizations are avoided. To achieve high-accuracy results an interv...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • IEEE Trans. on CAD of Integrated Circuits and Systems

دوره 9  شماره 

صفحات  -

تاریخ انتشار 1990